| PART |
Description |
Maker |
| GAL22V10D-25LJNI LATTICESEMICONDUCTORCORP-GAL22V10 |
EE PLD, 25 ns, PQCC28 LEAD FREE, PLASTIC, LCC-28
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.
All Devices Discontinued
GAL 22V10 Device Datasheet
|
Lattice Semiconductor, Corp.
|
| RK45B1A00001 RK45B1A00002 RK45C |
This LED illuminated ring potentiometer is best suited for knob design of various set devices
|
ALPS ELECTRIC CO.,LTD.
|
| DME150-2 DME150-3 |
150 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip
|
Acrian
|
| AN-9738 |
Design Guideline on 150W Power Supply for LED Street Lighting Design Using FL7930B and FAN7621S
|
Fairchild Semiconductor
|
| LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005 |
PolySwitch Resettable Devices Line-Voltage-Rated Devices
|
Tyco Electronics
http://
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| LR4-380XF LR4-600XF VTP210SL19.2_5.8 MINISMDE190F- |
PolySwitch Resettable Devices Strap Battery Devices
|
Tyco Electronics
|
| SMD260 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| TSM600-250F-RA |
PolySwitch庐PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| MICROSMD200F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| TS600-200-RA-B-0.5 |
PolySwitch庐PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
|
